Gottschalch, V. : rechercher sur Z-Library

Le plus grand référentiel d'articles scientifiques au monde. 70,000,000+ d'articles gratuitement.

Don't use scam websites

Livres
Articles (179)
Les plus populaires
Liste
- Liste
- Tableau

1

Atomic force microscopy on (001) surfaces of GaAs MOVPE layers

Dr. Ines Pietzonka, Dr. Dietmar Hirsch, Dr. Volker Gottschalch, Dr. Reinhard Schwabe, Dr. Reiner Franzheld, Prof. Klaus Bente, Prof. Frieder Bigl

Journal:

Chemical Vapor Deposition

Année:

1996

Langue:

english

Fichier:

PDF, 849 KB

english, 1996

2

Polymer issues in nanoimprinting technique

Frank Gottschalch, Thomas Hoffmann, Clivia M Sotomayor Torres, Hubert Schulz, Hella-Christin Scheer

Journal:

Solid-State Electronics

Année:

1999

Langue:

english

Fichier:

PDF, 143 KB

english, 1999

3

Temperature Dependent Minority Carrier Recombination on GaAs: Sn

N. Puhlmann, G. Oelgart, V. Gottschalch

Journal:

physica status solidi (a)

Année:

1991

Langue:

english

Fichier:

PDF, 474 KB

english, 1991

4

SPIE Proceedings [SPIE Microelectronics, MEMS, and Nanotechnology - Brisbane, Australia (Sunday 11 December 2005)] Photonics: Design, Technology, and Packaging II - Cylindric resonators with coaxial Bragg reflectors

Schmidt-Grund, Rüdiger, Gühne, Tobias, Hochmuth, Holger, Rheinländer, Bernd, Rahm, Andreas, Gottschalch, Volker, Lenzner, Jörg, Grundmann, Marius, Abbott, Derek, Kivshar, Yuri S., Rubinsztein-Dunlop,

Année:

2006

Langue:

english

Fichier:

PDF, 513 KB

english, 2006

5

Joint influence of surfactants and humic matter on PAH solubility. Are mixed micelles formed?

Holger Lippold, Uta Gottschalch, Hermann Kupsch

Journal:

Année:

2008

Langue:

english

Fichier:

PDF, 173 KB

english, 2008

6

SPIE Proceedings [SPIE International Symposium on Optical Science and Technology - Seattle, WA (Sunday 7 July 2002)] Complex Mediums III: Beyond Linear Isotropic Dielectrics - Generalized ellipsometry of complex mediums in layered systems

Schubert, Mathias, Kasic, Alexander, Hofmann, Tino, Gottschalch, Volker, Off, Juergen, Scholz, Ferdinand, Schubert, Eva, Neumann, Horst, Hodgkinson, Ian J., Arnold, Matthew D., Dollase, Wayne A., Herz

Année:

2002

Langue:

english

Fichier:

PDF, 392 KB

english, 2002

7

[IEEE The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. - Smolenice Castle, Slovakia (Oct. 17-21, 2004)] The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. - Optical properties of edge emitting semiconductor laser diodes with facet coated bragg mirror

Kovac, J., Kovac, J., Uherek, F., Pudis, D., Gottschalch, V., Leibiger, G., Guhne, T., Rheinlander, B.

Année:

2004

Langue:

english

Fichier:

PDF, 549 KB

english, 2004

8

Far-infrared dielectric function and phonon modes of spontaneously ordered (AlxGa1-x)0.52In0.48P

Hofmann, Tino, Gottschalch, Volker, Schubert, Mathias

Journal:

MRS Proceedings

Année:

2002

Langue:

english

Fichier:

PDF, 126 KB

english, 2002

9

Method for the Analysis of Activity Structures and Future Work Forms Under Automation

Modrow-Thiel, B., Roßmann, G., Gottschalch, H., Wächter, H.

Journal:

IFAC Proceedings Volumes

Année:

1990

Langue:

english

Fichier:

PDF, 1.35 MB

english, 1990

10

Bor- und Stickstoffeinbau: AIIIBV -Mischkristallbildung bei der metallorganischen Gasphasenepitaxie auf (001) GaAs Substraten

V. Gottschalch, G. Leibiger, G. Benndorf

Journal:

Zeitschrift für anorganische und allgemeine Chemie

Année:

2002

Langue:

german

Fichier:

PDF, 38 KB

german, 2002

11

Phonon Modes and Critical Points of GaPN

G. Leibiger, V. Gottschalch, R. Schwabe, G. Benndorf, M. Schubert

Journal:

physica status solidi (b)

Année:

2001

Langue:

english

Fichier:

PDF, 76 KB

english, 2001

12

Phonon Modes of InxGa1–xAs1–yNy Measured by Far Infrared Spectroscopic Ellipsometry

G. Leibiger, V. Gottschalch, M. Schubert

Journal:

physica status solidi (b)

Année:

2001

Langue:

english

Fichier:

PDF, 85 KB

english, 2001

13

Dielectric Function Effects Due to Isovalent Monolayers of III-Elements Buried in GaAs, GaP, and AlGaAs

H. Schmidt, B. Rheinländer, A. Kasic, V. Gottschalch

Journal:

physica status solidi (a)

Année:

1997

Langue:

english

Fichier:

PDF, 158 KB

english, 1997

14

Ultrathin GaAs Layers Embedded in AlAs: The Observation of Intense Short-Wavelength Emission

R. Schwabe, V. Gottschalch, F. Pietag, K. Unger, M. Di Ventra, A. Bitz, J. L. Staehli

Journal:

physica status solidi (a)

Année:

1997

Langue:

english

Fichier:

PDF, 149 KB

english, 1997

15

The Temperature Dependence of the Optical Absorption of an InAs-Monolayer Embedded in GaAs Measured by Means of Photocurrent

R. Pickenhain, V. Gottschalch

Journal:

physica status solidi (a)

Année:

1997

Langue:

english

Fichier:

PDF, 122 KB

english, 1997

16

Optical Polarization Spectroscopy on Quantum Confined Stark Effect in Resonant-Cavity AlGaAs/GaAs MQW Structures

B. Rheinländer, J. Borgulová, J. Kováč, V. Gottschalch, J. Waclawek

Journal:

physica status solidi (a)

Année:

1997

Langue:

english

Fichier:

PDF, 162 KB

english, 1997

17

Quantum Confined Stark Effect of Excitons Localized at Very Thin InAs Layers Embedded in GaAs

H. von Wenckstern, H. Schmidt, R. Pickenhain, V. Gottschalch

Journal:

physica status solidi (a)

Année:

2002

Langue:

english

Fichier:

PDF, 91 KB

english, 2002

18

MOVPE Growth and Characterisation of Zn-Doped (GaIn)P Layers with Respect to Surface Structure and Ordering

I. Pietzonka, T. Sass, G. Benndorf, R. Franzheld, V. Gottschalch

Journal:

Crystal Research and Technology

Année:

2000

Langue:

english

Fichier:

PDF, 560 KB

english, 2000

19

Synthesis, X-ray structure and application of bis[allylamine(dimethyl)gallium(III)] as a precursor for the growth of GaP layers by MOVPE

Prof. Herbert Schumann, Dr. Oliver Just, Dr. Siegbert Nickel, Dr. Roman Weimann, Dr. Volker Gottschalch, Dr. Bernd P. Keller, Dr. Reinhard Schwabe

Journal:

Advanced Materials

Année:

1994

Langue:

english

Fichier:

PDF, 610 KB

english, 1994

20

Ätzuntersuchungen an Verneuilspinellen

V. Gottschalch, W.-H. Petzke, Prof. Dr. sc. E. Butter

Journal:

Crystal Research and Technology

Année:

1972

Langue:

german

Fichier:

PDF, 792 KB

german, 1972

21

Die autoepitaktische Abscheidung von GaAs im System Ga(CH3)3–AsH3–H2

Prof. Dr. sc. W.-H. Petzke, Dipl.-Min. V. Gottschalch, Prof. Dr. sc. E. Butter

Journal:

Crystal Research and Technology

Année:

1973

Langue:

german

Fichier:

PDF, 170 KB

german, 1973

22

Epitaktische Abscheidung von GaAs im System Ga(CH3)3AsH3H2 (I) Autoepitaktische Abscheidung

Dr. V. Gottschalch, Dr. W.-H. Petzke, Prof. Dr. sc. E. Butter

Journal:

Crystal Research and Technology

Année:

1974

Langue:

german

Fichier:

PDF, 587 KB

german, 1974

23

Epitaxial Deposition of GaAs in the Ga(CH3)3AsH3H2 system (II). Investigations on the Hetero-Epitaxy of GaAs on Ge

Dr. V. Gottschalch, Dr. W.-H. Petzke, Prof. Dr. sc. E. Butter

Journal:

Crystal Research and Technology

Année:

1974

Langue:

english

Fichier:

PDF, 554 KB

english, 1974

24

Epitaxial Deposition of GaAs in the Ga(CH3)3AsH3H2 System (III) Heteroepitaxy on Isolating Substrates

Dr. W.-H. Petzke, Dr. V. Gottschalch, Prof. Dr. sc. E. Butter

Journal:

Crystal Research and Technology

Année:

1974

Langue:

english

Fichier:

PDF, 416 KB

english, 1974

25

Epitaxial Deposition of GaAs in the Ga (CH3)3AsH3H2-System (IV) Thermodynamic and Kinetic Considerations

Dr. W.-H. Petzke, Dr. V. Gottschalch, Prof. Dr. sc. E. Butter

Journal:

Crystal Research and Technology

Année:

1974

Langue:

english

Fichier:

PDF, 404 KB

english, 1974

26

Das quaternäre Schmelzdiagramm GaAs-P Sn

H. Rentsch, Dr. G. Kühn, Dr. A. Leonhardt, Dr. V. Gottschalch, Dr. E. Butter

Journal:

Crystal Research and Technology

Année:

1976

Fichier:

PDF, 315 KB

1976

27

Untersuchungen zur heteroepitaktischen Abscheidung von GaP auf GaAs aus der Sn-Lösung

Dr. V. Gottschalch, Dr. P. Kramer, Prof. Dr. sc. E. Butter

Journal:

Crystal Research and Technology

Année:

1978

Langue:

german

Fichier:

PDF, 643 KB

german, 1978

28

H3PO4 — etching of {001}-faces of InP, (GaIn)P, GaP, and Ga(AsP)

Dr. V. Gottschalch, W. Heinig, Prof. Dr. sc. E. Butter, Dr. H. Rosin, G. Freydank

Journal:

Crystal Research and Technology

Année:

1979

Langue:

english

Fichier:

PDF, 1.31 MB

english, 1979

29

The Applicability of Light-Microscopical Methods for the Investigation of Dislocation Structure in Semiconductors

Dr. K. Löschke, Dr. V. Gottschalch, Dr. K. Jacobs, Dr. A. Tempel

Journal:

Crystal Research and Technology

Année:

1979

Langue:

english

Fichier:

PDF, 536 KB

english, 1979

30

Structural Etching of {001} and {110} Faces of Various AIIIBV Compounds

Dr. V. Gottschalch

Journal:

Crystal Research and Technology

Année:

1979

Langue:

english

Fichier:

PDF, 588 KB

english, 1979

31

Etch- and Transmission Electron Microscope Investigations of Microdefects in (001) LEC-GaP Substrates

Dr. V. Gottschalch, Dr. G. Wagner, Dr. M. Pasemann

Journal:

Crystal Research and Technology

Année:

1981

Langue:

english

Fichier:

PDF, 485 KB

english, 1981

32

MOVPE growth of GaAs on Ge substrates by inserting a thin low temperature buffer layer

S. Scholz, J. Bauer, G. Leibiger, H. Herrnberger, D. Hirsch, V. Gottschalch

Journal:

Crystal Research and Technology

Année:

2006

Langue:

english

Fichier:

PDF, 422 KB

english, 2006

33

Influence of Microdefects on the Generation of Dislocations in Homoepitaxial Gallium Phosphide Layers Grown on LEC Substrates

Dr. G. Wagner, Dr. V. Gottschalch, Dr. M. Pasmann

Journal:

Crystal Research and Technology

Année:

1982

Langue:

english

Fichier:

PDF, 756 KB

english, 1982

34

Determination of the crystallographic polarity of {111}-InP crystals by the kossel technique and chemical etching

Dr. V. Geist, Dr. C. Ascheron, Dr. V. Gottschalch

Journal:

Crystal Research and Technology

Année:

1983

Langue:

english

Fichier:

PDF, 218 KB

english, 1983

35

The determination of liquidus data in the In-As system

Dr. G. Knobloch, Dr. V. Gottschalch

Journal:

Crystal Research and Technology

Année:

1985

Langue:

english

Fichier:

PDF, 252 KB

english, 1985

36

Thermal Resistivity of GaInAsP Alloy. Experimental Results

Dr. Ing. W. Both, Dr. rer. nat. V. Gottschalch, Dr. rer. nat. G. Wagner

Journal:

Crystal Research and Technology

Année:

1986

Langue:

english

Fichier:

PDF, 132 KB

english, 1986

37

Defects in LEC-grown Indium Phosphide Crystals Doped with Tin

Dr. G. Wagner, Dr. V. Gottschalch

Journal:

Crystal Research and Technology

Année:

1986

Langue:

english

Fichier:

PDF, 2.07 MB

english, 1986

38

Revealing of lattice defects on (111) faces of gallium phosphide and indium phosphide by chemical etching

Dr. G. Wagner, Dr. V. Gottschalch

Journal:

Crystal Research and Technology

Année:

1988

Langue:

english

Fichier:

PDF, 750 KB

english, 1988

39

Chemical etching and polishing of InP

Dr. E. Kurth, Dr. A. Reif, Dr. V. Gottschalch, Dr. sc. J. Finster, Prof. Dr. sc. E. Butter

Journal:

Crystal Research and Technology

Année:

1988

Langue:

english

Fichier:

PDF, 516 KB

english, 1988

40

InGaAsP quaternary layers on InP (100) substrate analysed by ion backscattering and channeling

Dr. R. Flagmeyer, Dr. V. Gottschalch

Journal:

Crystal Research and Technology

Année:

1989

Langue:

english

Fichier:

PDF, 524 KB

english, 1989

41

Wetting of InP by indium- and indium-tin melts

DC U. Mareck, Dr. V. Gottschalch, Prof. Dr. E. Butter

Journal:

Crystal Research and Technology

Année:

1989

Langue:

english

Fichier:

PDF, 299 KB

english, 1989

42

J. S. Harris (ed.). Gallium arsenide and related compounds 1988. Institute of physics conference series number 96. Proceedings of the fifteenth international symposium on gallium arsenide and related compounds, held in Atlanta, Georgia, 11.–14. September 1988. Institute of Physics, Bristol and Philadelphia 1988, 637 Seiten, zahlreiche Abbildungen und Tabellen, Autorenindex, £ 57.50, ISBN 0-85498-051-2

Journal:

Crystal Research and Technology

Année:

1990

Langue:

german

Fichier:

PDF, 71 KB

german, 1990

43

Dennis W. Hess, Klavs F. Jensen (eds). Microelectronics processing — chemical engineering aspects. Advances in chemistry series 221. American Chemical Society, Washington, DC 1989, 548 Seiten, 173 Abbildungen, 28 Tabellen, Register, ISBN 0-8412-1475-1

Journal:

Crystal Research and Technology

Année:

1990

Langue:

german

Fichier:

PDF, 64 KB

german, 1990

44

LPE growth and characterization of InP/InGaAsP ridge-waveguide lasers at 1.3 μm-wavelength

Dr. V. Gottschalch, Dr. B. Rheinländer, Prof. G. Oelgart, Dr. H.-G. Brühl, W. Bayer, G. Schwarz, Dr. K. Vogel

Journal:

Crystal Research and Technology

Année:

1990

Langue:

english

Fichier:

PDF, 760 KB

english, 1990

45

H. G. Schneider, V. Ruth, T. Kormany (eds.). Advances in Epitaxy and Endotaxy. Akadémiai Kiadó, Budapest 1990 and Elsevier Scientific Publishers, Amsterdam, 460 Seiten, 250 Abbildungen (Schemata und Diagramme), zahlreiche Tabellen, 487 Quellennachweise, Sachwörterverzeichnis, Preis: Ft. 1020. –, ISBN 963-05-4743-0

Journal:

Crystal Research and Technology

Année:

1991

Langue:

german

Fichier:

PDF, 73 KB

german, 1991

46

Saturation Behaviour of In – Ga – As Melts and Growth of In.53Ga.47As Lattice-matched to (001) InP Substrates

Dr. V. Gottschalch, Dr. G. Knobloch, Prof.-Dr. E. Butter

Journal:

Crystal Research and Technology

Année:

1991

Langue:

english

Fichier:

PDF, 354 KB

english, 1991

47

M. G. Astles. Liquid-Phase Epitaxial Growth of III–V Compound Semiconductor Materials and their Device Applications. Adam Hilger, Bristol, Philadelphia und New York 1990, 221 seiten, zahlreiche Abbildungen und Tabellen, 390 Quellennachweise, Sachwörterverzeichnis, £-37.50, ISBN 0-7503-0044-2

Journal:

Crystal Research and Technology

Année:

1992

Langue:

german

Fichier:

PDF, 67 KB

german, 1992

48

Takashi Hariu (ed.). Low Temperature Epitaxial Growth of Semiconductors. World Scientific Publishing Co. Pte. Ltd., Singapore, New Jersey, London, Hong Kong 1991, 343 Seiten, zahlreiche Abbildungen und Tabellen, 309 Quellennachweise, ISBN 9971–50–839–7

Journal:

Crystal Research and Technology

Année:

1992

Langue:

german

Fichier:

PDF, 70 KB

german, 1992

49

The MOCVD Challenge. Volume 1: A Survey of GaInAsP — InP for Photonic and Electronic Applications. Adam Hilger, Bristol and Philadelphia, 1989, 328 Seiten, zahlreiche Abbildungen und Tabellen, 386 Quellennachweise, Preis: 65.00 £ ISBN 0-85274-161-8

M. Razeghi, V. Gottschalch

Journal:

Crystal Research and Technology

Année:

1993

Langue:

german

Fichier:

PDF, 84 KB

german, 1993

50

C. W. Tu, D. C. Houghton, R. T. Tung (eds). Semiconductor heterostructures for photonik and electronic applications. Materials Research Society Symposium Proceedings Volume 281 (Symposium held November 30–December 4, 1992, Boston, Massachusetts, U.S.A. Material Research Society Pittsburgh, Pennsylvania 15237, 1993, 836 Seiten, zahlreiche Abbildungen und Tabellen, Quellennachweise, Autorenindex, Sachwörterverzeichnis, ISBN 1-55899-176-X, Preis US $ 77,00

Journal:

Crystal Research and Technology

Année:

1994

Fichier:

PDF, 91 KB

1994